Amorphous-microcrystalline MoS2 thin films are fabricated using the sol-gel method to produce MoS2/Si-based solar cells.The generation mechanisms of the S-shaped current density-voltage(J-V)curves of the solar cells are analyzed.To improve the performance of the solar cells and address the problem of the S-shaped J-V curve,a MoS2 film and a p+layer are introduced into the front and back interfaces of the solar cell,respectively,which leads to the formation of a p-n junction between the p-Si and the MoS2 film as well as ohmic contacts between the MoS2 film and the ITO,improving the S-shaped J-V curve.As a result of the high doping characteristics and the high work function of the p+layer,a high-low junction is formed between the p+and p layers along with ohmic contacts between the p+layer and the Ag electrode.Consequently,the S-shaped J-V curve is eliminated,and a significantly higher current density is achieved at a high voltage.The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency(CE)of 7.55％.The findings of this study may improve the application of MoS2 thin films in silicon-based solar cells,which are expected to be widely used in various silicon-based electronic and optical devices.