基于非平衡格林函数(NEGF)的量子输运理论框架,对双栅MOSFET进行了二维实空间数值模拟.在对表征载流子电势的泊松方程自洽求解后,感兴趣的物理量(如亚阈值摆幅、漏致势垒下降、载流子密度、电流密度等)可以被求得,观察了由栅极注入效应导致的二维电荷分布,并对不同电介质材料对栅极漏电流的影响进行了研究.此外,还通过调整电介质参数并进行比较的方法,研究了电介质的有效质量、介电常数、导带偏移对栅极漏电流的影响.该模拟方法为双栅MOSFET中载流子自栅极的注入提供了良好的物理图景,对器件特性的分析和比较有助于栅氧层高k电介质材料的选取.“,”A numerical simulation of double gate (DG) MOSFETs was carried out under the framework of non-equilibrium Green’s function (NEGF) in two-dimensional real space.After attaining the self-consistent solution of the potential with Poisson’s equation, the quantities of interest (such as the sub-threshold swing, drain induced barrier lowering (DIBL) , carrier density, current density, etc.) were computed.The two-dimensional carrier distribution due to the gate contact injection was observed.The effect of different dielectric materials on the gate leakage current was investigated.Moreover, the effects of the effective mass, dielectric constant and band offset on the gate leakage current were researched by virtue of the parameters variation and characteristic comparison.The simulation method provides good physical insight into the carrier injection through gate contacts, and the assessment of results is beneficial to the choice of high k materials as gate oxide layers for DG MOSFETs.