设想、发展和制造了一种利用MOS场效应晶体管亚阈值效应的新颖固传器,并获得了实验结果。这种光电探测器能和MOSFET电路或CCD电路集成在一同芯片上,在宽动态范围内提供模拟电压信号。实验表明:此光电探测器和阵列在可见光谱内,有大于10~7的入射光强动态范围。另外,新的光电探测器还被用于实现CCD和自扫描MOSFET线阵。本文详细描述了新的光电探测器件的理论和用它构成成象线列的应用。最后,介绍了对设计制造的器件及阵列的实验结果。 Imagine, develop and manufacture a novel solid state relay utilizing the sub-threshold effect of MOS field effect transistors and obtain the experimental results. This photodetector can be integrated with a MOSFET circuit or a CCD circuit on a single chip to provide an analog voltage signal over a wide dynamic range. Experiments show that the photodetectors and arrays have a dynamic range of incident light intensity greater than 10 ~ 7 in the visible spectrum. In addition, new photodetectors are also used to implement CCD and self-scan MOSFET arrays. This paper describes in detail the theory of new photodetection devices and their use to form imaging line arrays. Finally, the experimental results on the designed devices and arrays are introduced.