近日,在美国空军科学研究实验室资助下,美国伊利诺伊大学厄巴纳-香槟分校(UIUC)宣布研制出先进的硅基氮化镓晶体管技术,在其微纳米技术实验室实现了200mm硅晶圆上制造出高电子迁移率晶体管(HEMT),若在工业界可能实现更大的晶圆尺寸。实现原理UIUC电气与计算机工程系(ECE)的助理教授及其团队能够在硅平台上制造 Recently, funded by the U.S. Air Force Scientific Research Laboratory, University of Illinois at Urbana-Champaign (UIUC) announced that it has developed an advanced silicon-based GaN transistor technology and implemented 200mm silicon wafers in its micro and nanotechnology laboratory On the manufacture of high electron mobility transistor (HEMT), if possible in the industry to achieve larger wafer size. Implementing Principles UIUC’s Department of Electrical and Computer Engineering (ECE) assistants and their teams can manufacture silicon platforms