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据日本《电子材料》1992年第11期报道,日本三洋电机公司在世界上率先开发新的杂质扩散技术,即在GaAs为主的Ⅲ-Ⅴ族化合物半导体上,在低温及短时间内重新形成n型和p型导电层。该技术在半导体上用等离子体CVD法沉积氧化硅膜和氮化硅膜,这种片子经过短时间热处理,把SiO_x中的Si扩散到半导体中,在高浓度下重新形成薄的导电层(n型和p型)。可在片子的整个表面和凹凸部(腐蚀孔)等处,在不同形状(亚微米图形到大面积图形)下,任意选择形成导电层。该技术可控制膜的折射率和腐蚀速度,其措施如下;(1)SiO_x下层膜,硅和氧的比例超过1:2,富含Si(2)Si _xN_y上层膜,使晶体中的As等Ⅴ族原子不向外界扩散。
According to Japan’s “Electronic Materials” No. 11 of 1992 report, Japan’s Sanyo Electric Company in the world took the lead in the development of new impurity diffusion technology, that is GaAs based III-V compound semiconductors, in the low temperature and a short time to re-form n-type and p-type conductive layer. This technique deposits a silicon oxide film and a silicon nitride film by a plasma CVD method on a semiconductor, which is subjected to a short time heat treatment to diffuse Si in the SiOx into the semiconductor and reform the thin conductive layer (n Type and p type). The conductive layer can be arbitrarily selected from different shapes (sub-micron patterns to large-area patterns) at the entire surface of the film and the concave-convex portions (etching holes) and the like. The technology can control the refractive index and the etching rate of the film. The measures are as follows: (1) The SiOx lower layer film has a ratio of silicon to oxygen exceeding 1: 2 and is rich in Si (2) SixNy upper layer film, Group V atoms do not spread to the outside world.