论文部分内容阅读
研究了接触效应对有机薄膜晶体管性能的影响.首先在n型重掺杂Si片上制备了以MOO3修饰的Al电极为源漏电极的Pentacene基OTFTs(organic thin film transistors),器件场效应迁移率μef达到0.42cm2/V·s,阈值电压VT为-9.16V,开关比4.7×103.通过中间探针法,对器件电势分布做了定性判断,发现源漏端电势分布不均匀;沟道电阻RL和接触电阻RC都随着栅压VG增加而减小,并且RL减小的比RC更快;RL随源漏电压VDS增加缓慢变大.随后采用电荷漂移理论对其输出特性进行了分析和理论模拟,发现考虑接触电阻后,由实验结果计算得出的器件场迁移率增加两倍多,达到1.1cm2/V·s.因此如何分析、减小接触电阻是OTFT器件提高性能和实现、扩大应用中要解决的重要问题之一.
The influence of the contact effect on the performance of the organic thin film transistor has been investigated.Pentacene based OTFTs with MOO3 modified Al electrodes as source and drain electrodes were fabricated on n-type heavily doped Si wafers. The field-effect mobility μef Reaches 0.42cm2 / V · s, the threshold voltage VT is -9.16V, and the switching ratio is 4.7 × 103. By means of the intermediate probe method, the potential distribution of the device is qualitatively determined and the potential distribution of the source and drain terminals is not uniform. The channel resistance RL And contact resistance RC decrease with the increase of gate voltage VG, and RL decreases faster than RC. RL increases slowly with the increase of source-drain voltage VDS. Then the charge-drift theory is used to analyze the output characteristics and theory Simulation and found that considering the contact resistance, calculated from the experimental results of the field device mobility more than tripled to 1.1cm2 / V · s. Therefore, how to analyze and reduce the contact resistance OTFT devices to improve performance and implementation, expand the application One of the important issues to be solved.