论文部分内容阅读
研究了Ｓｉ（１００）注入铒后所形成的表面非晶层在不同退火温度下的固相外延结晶以及铒的迁移和掺杂规律。结果表明，表面非晶层先以基体单晶硅为晶种固相外延结晶，铒在品体非晶界面们析，但当用偏析聚集到一定浓度时则外延结晶停止，剩余损伤层变为多晶结构。在３５０ｋｅｖ的高剂量注入下，再结晶区域内的最大掺杂浓度随退人温度的增加而降低，但对１５０ｋｅｖ的低剂量注入，观察到８５０℃退火温度下掺杂浓度的反常增强。
The solid phase epitaxy crystallization of the surface amorphous layer formed by the implantation of erbium (100) and the migration and doping of erbium at different annealing temperatures were studied. The results show that the surface amorphous layer first takes the substrate monocrystalline silicon as seed crystal solid phase epitaxy and the erbium is analyzed at the amorphous interface of the product, but when the concentration is segregated to a certain concentration, the epitaxial crystallization stops and the remaining damaged layer becomes Polycrystalline structure. Under the high dose of 350kev, the maximum doping concentration in the recrystallized region decreases with the increase of the withdrawal temperature. However, for the low dose of 150kev, the anomalous enhancement of the doping concentration is observed at the annealing temperature of 850 ℃.