论文部分内容阅读
用SIMS技术对表面覆盖金的SOS片进行了铝自掺杂剖面研究.结果表明,不同工艺对SOS膜的铝自掺杂剖面曲线影响很大.背面封闭的SOS片的铝自掺杂剖面曲线十分陡削,过渡层厚度为450-750A;背面不封闭的SOS片的铝自掺杂剖面曲线不陡削,过渡层厚度为1200-1800A.同时,在过渡层以外背面不封闭的 SOS片中的铝杂质含量比背面封闭的 SOS片高很多.讨论了自掺杂形成的原因并对上述实验结果提出了解释.
The self-doping study of aluminum on the surface-covered gold SOS films was carried out by SIMS technique.The results showed that different processes had a great influence on the self-doping aluminum profiles of the SOS films.The aluminum self-doping profile of the backside closed SOS films Very steep cutting, the transition layer thickness of 450-750A; the back of the non-closed SOS piece of aluminum self-doping profile curve is not steep cutting, the transition layer thickness of 1200-1800A.At the same time, outside the transition layer is not closed on the back of SOS tablets The content of aluminum impurity is much higher than that of the backside closed SOS.The reason of formation of self-doping is discussed and the above experimental results are explained.