The reaction of H+ SO2→HO + SO was theoretically investigated sing ab initio MOmethods, and HF/TZV (d, p) level of theory was employed to locate stationary poi
The deposition of lnxGa1-xAs (0.25≤x≤0 .5) on (311)B GaAs surfaces using solid source molecular bea m epitaxy (MBE) has been studied. Both AFM and photolumine