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The irradiation damages in the electron beam lithography(EBL)to Al-gate MOS capacitors inthe ranges of 10—30keV and 10~(-6)—10~(-3)C·cm~(-2) and the effects of annealing on damages at lowtemperature(<500℃)are given.The research on damages caused by high electron energy(30keV)and ultra-high dosages(10~(-4)—10~(-3) C·cm~(-2))is important and useful to the EBL.The resolution canbe improved by high electron energy.Both the EBL with vapor-development and withoutdevelopment are all operated at ultra-high dosages.After irradiations,the concentrations of inter-face states can increase by about one to two orders of magnitude and the flat-band voltages by abouta few to more than ten volts.Under constant exposure dosages,the fiat-band voltages areindependent of the changes of electron energies in certain energy ranges.Under constant electronenergies the concentrations of interface states are independent of the changes of exposure dosages incertain dosage ranges.After annealing,the flat-band voltages can recover the values before theirradiations for energies and dosages in the ranges of 10—30keV and 1×10~(-6)—6×10~(-3)C·cm~(-2)respectively.The interface state concentrations due to the damages of ultra dosages can not beremoved completely.
The irradiation damages in the electron beam lithography (EBL) to Al-gate MOS capacitors inthe ranges of 10-30 keV and 10 -6 (-6) -10 -3 C · cm -2 and the effects of annealing on damages at lowtemperature (<500 ° C) are given. The research on on caused damage by high electron energy (30 keV) and ultra-high dosages (10 -4 (-10) C · cm -2 ) is important and useful to the EBL. The resolution canbe improved by high electron energy. Blog The EBL with vapor-development and without development is all operated at ultra-high dosages. After irradiations, the concentrations of inter-face states can increase by about one to two orders of magnitude and the flat-band voltages by abouta few to more than ten volts. Under constant exposure dosages, the fiat-band voltages are in dependent of the changes of electron energies in certain energy ranges.Under constant electronenergies the concentrations of interface states are independent of the changes of exposure dosages incertain dosage ranges.After annealing, the flat- band voltages can recover the values before their radiations for energies and dosages in the ranges of 10-30 keV and 1 × 10 -6 -6 × 10 -3 C · cm -2 concentrations due to the damages of ultra dosages can not beremoved completely.