Ohmic contacts of 4H-SiC on ion-implantation layers

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The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range R p are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic contacts on Si-face 4H-SiC implantation layers are measured by transfer length methods (TLMs). The results show that the values of sheet resistance R sh are 30 kΩ/□ and 4.9 kΩ/□ and the values of specific contact resistance ρ c of ohmic contacts are 7.1×10-4Ω·cm 2 and 9.5×10-5Ω·cm 2 for the implanted layers with implantation performed three and four times respectively. The ohmic contacts of 4H-SiC are fabricated on nitrogen implanted layers made by performing a box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range Rp are calculated by the Monte Carlo simulator TRIM . The results show that the values ​​of sheet resistance R sh are 30 kΩ / □ and 4.9 kΩ / □ and the values ​​of specific contact resistance ρ c of ohmic contacts are 7.1 × 10 -4 Ω · cm 2 and 9.5 × 10 -5 Ω · cm 2 for the implanted layers with implantation performed three and four times respectively.
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