集成电路中用等离子体刻Al已经日益重要,为了满足VLSI工艺所需要的精确控制,要对刻蚀过程进行监控.使用含氯的刻蚀气体时,由于ALCI分子中电子跃迁的结果,可以观测到很强的波长为261.4毫微米的发射谱线,可以通过这种发射谱线的强度变化来监控剜蚀过程.本文介绍光谱仪和一种简单的固体检测器的应用,检测器是和干涉滤光器连在一起的,光的发射和反射技术都可用来检测等离子体刻Al的终点. It is increasingly important to etch Al by plasma in integrated circuits, and the etching process is monitored in order to meet the precise control required by the VLSI process.As a result of the electron transition in the ALCI molecule, chlorine-based etching gas can be used to observe To a very strong emission line with a wavelength of 261.4 nm, the etch process can be monitored by the intensity change of this emission line.This paper presents the application of a spectrometer and a simple solid-state detector, Optical together, the light emission and reflection techniques can be used to detect the plasma etching Al end.