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以ＭｇＯ为例，对ＡＣ ＰＤＰ中电子束蒸发介质保护膜制备的工艺参数，如成膜时基板温度、沉积速率、成膜后的热处理条件等对ＡＣＰＤＰ工作特性的影响进行了系统的研究和分析，讨论了保护膜成分、结构、形貌等对发射特性和ＡＣＰＤＰ工作特性的影响，探讨了成膜的最佳工艺，并根据在放电过程中，由离子轰击产生的 ＭｇＯ膜表面特性的变化和假设氧对 ＭｇＯ膜表面特性的作用，对观测到的放电特性对 ＡＣＰＤＰ板各种制造工艺参数的依赖性进行了解释。
Taking MgO as an example, the process parameters of ACPDP, such as substrate temperature, deposition rate, heat treatment conditions after film formation, etc, were studied and analyzed systematically The influence of the composition, structure and morphology of the protective film on the emission characteristics and ACPDP operating characteristics was discussed. The optimum process of the film formation was discussed. According to the change of the surface properties of the MgO film produced by ion bombardment and Assuming the effect of oxygen on the surface properties of the MgO film, the dependence of the observed discharge characteristics on the various manufacturing process parameters of the ACPDP sheet has been explained.