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利用磁控溅射法在FTO玻璃上制备了Sn S薄膜。采用X射线衍射仪、扫描电子显微镜和紫外可见分光光度计对不同溅射参数下制备的Sn S薄膜的晶体结构、表面形貌和光学性能进行研究,确定出制备Sn S薄膜的最优溅射参数。结果表明:溅射功率为28 W,沉积气压在2.5 Pa时,制备出的Sn S薄膜在(111)晶面具有最好的择优取向,薄膜微观形貌呈单片树叶状,晶粒粒径约370 nm,晶粒分布均匀,薄膜表面光滑致密;最优溅射参数下制备的Sn S薄膜的吸收系数可达到105cm-1,比其他方法制备的Sn S薄膜的吸收系数值高,禁带宽度为1.48 e V,与半导体太阳能电池所要求的最佳禁带宽度(1.5 e V)十分接近。
Sn S thin films were prepared on FTO glass by magnetron sputtering. X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectrophotometer were used to study the crystal structure, surface morphology and optical properties of SnS thin films prepared under different sputtering parameters. The optimum sputtering conditions parameter. The results show that SnS thin films prepared at the sputtering power of 28 W and deposition pressure of 2.5 Pa have the best preferred orientation on the (111) crystal plane. The microstructure of the films is monolithic leaf-like and the grain size About 370 nm, the grains are evenly distributed and the surface of the film is smooth and compact. The absorption coefficient of the Sn S film prepared under the optimum sputtering parameters can reach 105 cm -1, which is higher than that of Sn S films prepared by other methods. The width is 1.48 eV, which is very close to the best forbidden band width (1.5 eV) required for semiconductor solar cells.