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研制出Ｈｅ离子注入局域寿命控制ＳＯＩ横向绝缘栅双极晶体管（ＳＯＩ－ＬＩＧＢＴ），有效地提高了器件的关断速度，且与集成电路工艺相兼容。数值模拟表明，该器件的t_f～V_F折衷关系优于采用非局域寿命控制的器件，在相同关断速度下其正向压降可降低０．６～１．４ Ｖ，避免了阳极短路结构的正向快速返回现象。
Developed a SOI-LIGBT with He ion implantation local lifetime control SOI-LIGBT, which effectively improves the turn-off speed of the device and is compatible with the integrated circuit technology. The numerical simulation shows that the device has better tradeoff between t_f and V_F than that of devices with nonlocal lifetime control. The forward voltage drop of the device can be reduced by 0.6 ~ 1.4 V at the same turn-off speed, avoiding the anode short circuit structure The positive rapid return phenomenon.