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研究了超薄栅氧化层(≤3.0nm)软击穿(softbreakdown,SBD)后的栅电流和衬底电流特性.提出了一个基于类渗流导电的SBD后栅电流和衬底电流的解析公式———类渗流导电公式.该公式能够在较大的电压范围(-4～+3V)模拟氧化层SBD后的栅电流和衬底电流的电流电压特性,为超薄栅氧化层可靠性的研究提供了一个较为简便的公式.
The gate current and substrate current characteristics after ultrathin gate oxide (≤3.0 nm) soft breakdown (SBD) are studied.The analytical formula of gate current and substrate current after SBD based on the seepage-like conductivity is proposed - - A kind of seepage conduction formula, which can simulate the current of gate current and substrate current in a large voltage range (-4 ~ + 3V) to study the reliability of ultrathin gate oxide Provide a more convenient formula.