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作者将现有DD—250淀积设备改装后用于RIE刻蚀,能够刻蚀出良好的FEA尖端阵列,并摸索出了一套RIE刻蚀磁敏传感器件的FEA尖端的工艺条件和工艺参数。本文对各种工艺条件和工艺参数作具体描述。
The author modified the existing DD-250 deposition equipment for RIE etching, capable of etching out a good FEA tip array, and found out the FEA tip process conditions and process parameters of a RIE-etched magnetic sensing device . This article describes a variety of process conditions and process parameters.