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我们在300K到4.2K温度范围内测量了亚微米硅MOSFET的特性,并画出了迁移率随温度的变化及载流子速度随纵向电场的变化(以温度为参数)曲线。发现500μm的器件在4.2K下的有效迁移率高达25000cm~2/Vs。而0.2μm的器件,由于高电场效应,其迁移率仅仅是800cm~2/Vs。我们画出迁移率随纵向电场的变化曲线,并发现,工作在0.1伏的器件,其弹道传播特性受到高电场的抑制。高电场效应也同样限制了亚微米GaAs FET的弹道传输效应。
We measured the characteristics of sub-micron silicon MOSFETs in the temperature range of 300K to 4.2K and plotted the change in mobility with temperature and the change in carrier velocity with longitudinal electric field in terms of temperature. It is found that the effective mobility of the device with 500μm at 4.2K is up to 25000cm 2 / Vs. The 0.2μm device, due to the high electric field effect, the mobility is only 800cm ~ 2 / Vs. We plotted the mobility versus vertical electric field and found that devices that operate at 0.1 Volt have ballistic propagation characteristics that are suppressed by high electric fields. The high electric field effect also limits the ballistic transmission effect of sub-micron GaAs FETs.