论文部分内容阅读
像素级的噪声是CMOS图像传感器的主要噪声源之一。针对CMOS有源像素传感器3T结构像素级的噪声问题,分析了3种抑制像素级噪声的方法。分析结果表明,复位晶体管的软复位噪声要小于硬复位噪声的2倍,PMOS管的1/f噪声低于NMOS管的1/f噪声,同时1/f噪声会随着栅面积的减小而增大。通过对像素的噪声分析,完成了3种像素级的集成电路的设计仿真,并采用了0.5μm标准CMOS工艺进行流片制作。测试表明,噪声的相对变化与分析结果吻合。
Pixel-level noise is one of the main noise sources for CMOS image sensors. Aiming at the pixel-level noise of 3T CMOS active pixel sensor, three methods of suppressing pixel-level noise are analyzed. The results show that the soft reset noise of the reset transistor is less than twice the hard reset noise, the 1 / f noise of the PMOS transistor is lower than that of the NMOS transistor, and the 1 / f noise will decrease as the gate area decreases Increase. Through the noise analysis of the pixel, the design simulation of the three kinds of pixel level integrated circuits has been completed, and the 0.5μm standard CMOS process has been used for the film production. The test shows that the relative change of noise agrees with the analysis result.