The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion sour

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This paper reports that the Schottky barrier height modulation of NiSi/n-Si is experimentally investigated by adopting a novel silicide-as-diffusion-source technique, which avoids the damage to the NiSi/Si interface induced from the conventional dopant segregation method. In addition, the impact of post-BF2 implantation after silicidation on the surface morphology of Ni silicides is also illustrated. The thermal stability of Ni silicides can be improved by silicideas-diffusion-source technique. Besides, the electron Schottky barrier height is successfully modulated by 0.11 eV at a boron dose of 1015 cm-2 in comparison with the non-implanted samples. The change of barrier height is not attributed to the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causes the upward bending of conducting band. The results demonstrate the feasibility of novel silicide-as-diffusion-source technique for the fabrication of Schottky source/drain Si MOS devices. This paper reports that the Schottky barrier height modulation of NiSi / n-Si is experimentally investigated by adopting a novel silicide-as-diffusion-source technique, which avoids the damage to the NiSi / Si interface induced from the conventional dopant segregation method. In addition, the impact of post-BF2 implantation after silicidation on the surface morphology of Ni silicides is also illustrated. The thermal stability of Ni silicides can be improved by silicideas-diffusion-source technique. 0.11 eV at a boron dose of 1015 cm-2 in with the non-implanted samples. The change of barrier height is not attributed to the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causes the upward bending of a conducting band. The results demonstrate the feasibility of novel silicide-as-diffusion-source-source technique for the fabrication of Schottky source / drain S i MOS devices.
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