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在InGaN发光二极管中 ,尽管存在着大量的位错 ,但其效率还是相当高的。用InGaN作为有源层是很重要的。在InGaN基LED的情况下 ,为产生光发射需要较高的激发功率。横向大面积外延生长的GaN激光二极管 (LDs)是在厚的GaN衬底上外延制备成的。在温度 2 5 0℃、30mW输出的连续工作状态下 ,其工作电流小于 4 2mA ,6 0 0℃、30mW输出的连续工作状态下的寿命约为1 5 0 0 0小时。这些结果表明 ,螺旋位错密度的降低延长了激光二极管的寿命。此外 ,良好的散热也是很重要的。
In InGaN light-emitting diodes, although there is a large number of dislocations, but its efficiency is still quite high. It is important to use InGaN as the active layer. In the case of InGaN-based LEDs, higher excitation power is required to generate light emission. Laterally large area epitaxial growth of GaN laser diodes (LDs) is epitaxially grown on thick GaN substrates. Under the continuous working condition that the temperature is 250 ℃ and the output of 30mW is continuous, its working current is less than 42mA, and the life time of continuous working state of 60 ℃ output and 60mW output is about 150,000 hours. These results show that the reduction of screw dislocation density prolongs the life of the laser diode. In addition, good heat dissipation is also important.