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采用电子回旋共振等离子体增强金属有机物化学气相沉积(ECR PEMOCVD)技术,在α Al2O3(0001)(蓝宝石)衬底上,分别以高纯氮气(N2)和三甲基铝(TMAl)为氮源和铝源低温生长氮化铝(AlN)薄膜。利用反射高能电子衍射(RHEED)、原子力显微镜(AFM)和X射线衍射(XRD)等测量样品,研究了AlN缓冲层和氮化镓(GaN)对六方AlN外延层质量的影响,实验表明在GaN缓冲层上能够低温生长出C轴取向的AlN单晶薄膜。
Electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition (ECR PEMOCVD) technology was used to synthesize α Al2O3 (0001) (sapphire) substrate with high purity nitrogen (N2) and trimethylaluminum (TMAl) And aluminum source low temperature growth aluminum nitride (AlN) film. The effects of AlN buffer layer and gallium nitride (GaN) on the quality of hexagonal AlN epitaxial layers were investigated by using RHEED, AFM and XRD measurements. The experimental results show that in the GaN The AlN single crystal film with C-axis orientation can be grown at low temperature on the buffer layer.