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分析了背景辐射影响长波HgCdTe光电导探测器性能的基本原理，分析中考虑了器件上下两表面的表面复合速度和不同器件的具体参数。在MTD标准测试杜瓦上改装了一视场角可连续变化的冷屏（110～10°），用光电导衰退测量了不同视场角下载流子有效寿命，用红外探测器的标准测试方法测量了不同规场角下器件的黑体响应率，单位带宽的均方根噪声电压，黑体探测率，实验结果表明所研制的长波器件已经达到低温背景限的性能。降低背景辐射量可使器件性能有很大提高，用测试过的器件的参数经理论计算得到的结果同实验数据基本一致。
The basic principle that the background radiation affects the performance of long wavelength HgCdTe photoconductive detectors is analyzed. The surface recombination velocity and the specific parameters of different devices are taken into account in the analysis. In the MTD standard test Dewar modified a field of view continuously changing the cold screen (110 ~ 10 °), with photoconductivity recession measured at different field of view of the effective life of the carrier, with the infrared detector standard test method The blackbody response rate, rms noise voltage per unit bandwidth and blackbody detection rate were measured under different gauge angles. The experimental results show that the developed longwave devices have reached the performance of low temperature background limit. Decreasing the amount of background radiation can greatly improve the performance of the device, using the measured parameters of the device tested theoretical results are basically the same with the experimental data.