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通过合理的外延层材料结构设计和改进的器件制备工艺,制备出功率增益截止频率(fmax)为183GHz的晶格匹配InP基In0.53Ga0.47As-In0.52Al0.48As HEMT.该fmax为国内HEMT器件最高值.还报道了器件的结构、制备工艺以及器件的直流和高频特性.
A lattice-matched InP-based In0.53Ga0.47As-In0.52Al0.48As HEMT with a power gain cut-off frequency (fmax) of 183 GHz was fabricated by a reasonable epitaxial layer structure design and an improved device fabrication process. The fmax is the national HEMT The highest value of the device, the structure of the device, the fabrication process, and the DC and high frequency characteristics of the device are also reported.