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随着功率半导体技术的日益发展,功率半导体器件和电路的应用领域也愈来愈广阔,例如等离子显示,马达驱动、通讯及家用电器等.因此对功率半导体器件的电流要求愈来愈大,对器件的可靠性要求也更高.如何实现大电流的要求,主要方法是增加功率MOS器件的宽长比或重复单元来实现,如何有效地抑制二次击穿,提高器件的可靠性,就是本文作的尝试.我们采用双栅结构制备高压MOS电路获得较满意的结果.一、双栅高压MOS电路特点及工作原理常规的单栅MOS高压电路结构如图1所
With the development of power semiconductor technology, the application fields of power semiconductor devices and circuits are becoming wider and wider, such as plasma display, motor drive, communication and household appliances, etc. Therefore, the current requirements of power semiconductor devices are getting larger and larger, The reliability of the device is also higher.How to achieve the requirements of high current, the main method is to increase the power MOS device width to length ratio or repeat unit to achieve, how to effectively inhibit the secondary breakdown, improve the reliability of the device is the article Make an attempt.We adopt the double-gate structure to prepare the high-voltage MOS circuit to obtain more satisfactory results.First, double gate high voltage MOS circuit characteristic and working principle Conventional single gate MOS high-voltage circuit structure as shown in Figure 1