【摘 要】
：
The Pt/Si/Ta/Ti multilayer metal contacts on 4H–SiC are annealed in Ar atmosphere at 600 ?C–1100 ?C by a rapid thermal processor (RTP). The long-term thermal
论文部分内容阅读
The Pt/Si/Ta/Ti multilayer metal contacts on 4H–SiC are annealed in Ar atmosphere at 600 ?C–1100 ?C by a rapid thermal processor (RTP). The long-term thermal stability is evaluated by aging the annealed contact at 600 ?C in air. The contact’s properties are determined by current–voltage measurement, and the specific contact resistance is calculated based on the transmission line model (TLM). Transmission electron microscope (TEM) and energy-dispersive x-ray spectrometry (EDX) are used to characterize the interface morphology, thickness, and composition. The results reveal that a higher annealing temperature is favorable for the formation of an Ohmic contact with a lower specific contact resistance, and causes the rapid degradation of the Ohmic contact in the aging process.
其他文献
We investigate the thermal entanglement in a spin-1/2 Ising–Heisenberg diamond chain, in which the vertical Heisen-berg spin dimers alteate with single Ising s
花生新品种──连花３号连花３号是大连市农科所以７７—１３—１６—１做母本，熊岳立茎大粒做父本杂交选育而成的花生新品种。该品种为珍珠豆型早熟大粒花生，植株直立，主茎高２２厘米，侧枝长２５厘米，结果枝
一rn在《为什么读经典》一书中伊塔洛·卡尔维诺谈及博尔赫斯,他说“从我这一代人开始,过去二十年来从事创作的人都深受他的润泽”.我愿意重新复述卡尔维诺的这句话,并更换一
Hydrogenated amorphous silicon nitride films (SiNx:H) are deposited at low temperature by high-frequency plasma-enhanced chemical vapor deposition (HF PECVD). T
By using the plasma enhanced chemical vapor deposition (PECVD) technique, amorphous silicon oxide films con-taining nanocrystalline silicon grain (nc-SiOx:H) ar
诱处4号是中国科学院遗传所以早熟3号为母本、安徽大青豆为父本经有性杂交、物理诱变等生物技术选育而成的大豆良种。特征特性:该品种属亚有限结荚习性,株高100厘米左右,单
We study the collective motion of active particles in environmental noise,where the environmental noise is caused by noise particles randomly diffusing in two-d
We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The
Our calculations demonstrate that the concentration of neutral oxygen vacancies can affect the geometrical structrue, electronic structure, and optical properti