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采用常规磁控溅射方法 ,通过优化工艺 ,在Si( 10 0 ) ,Si( 111)多种基片上沉积ZnO薄膜 .利用透射电镜 (TEM)、X射线衍射 (XRD)和X射线摇摆曲线 (XRC) ,对ZnO薄膜的微区形貌、结晶情况、C轴择优取向进行了详细的测试分析 .结果表明 ,所制备的ZnO薄膜具有理想的结构特性 ,大多数样品测得ZnO( 0 0 2 )晶面XRC的半高宽 (FWHM)为 1°左右 ,最小值达 0 .3 5 3°,优于目前国内外同类研究的最佳结果 2°.并对ZnO/Si( 10 0 )与ZnO/Si( 111)衬底的结果进行了比较和讨论 .
ZnO thin films were deposited on Si (100) and Si (111) substrates by the conventional magnetron sputtering method through the optimized process.The microstructures of the films were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray rocking curve XRC) were used to investigate the morphology, crystallinity and C-axis preferred orientation of ZnO thin films.The results show that the prepared ZnO thin films have ideal structural properties and most of the samples have been characterized by ZnO (0 0 2 ) FWHM of the XRC is about 1 ° and the minimum value is 0.353 °, which is better than the best result of similar studies at home and abroad 2 °. The results of ZnO / Si (111) substrates are compared and discussed.