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用热蒸发法为MOTOROLA中国电子有限公司手持电话外壳表面沉积了具有一定金属光泽的Sn电介质绝缘薄膜,论述了在真空度参数一定时,薄膜沉积时间、蒸发输入电流,以及蒸发源的排列方式诸方面的因素对沉积Sn电介质薄膜绝缘性能结构的影响。为此设计了专用环状面源层间互补蒸发电路,用于MOTOROLA中国电子有限公司及其在中国以外的公司生产手持电话外壳表面沉积Sn电介质绝缘薄膜。在生产实际过程中,有针对性地研究了影响沉积Sn电介质绝缘薄膜的各种因素,有效的控制了沉积Sn电介质绝缘薄膜的工艺参数。对指导大规模生产有较高参考价值。
The thermal evaporation method was used to deposit the Sn dielectric insulating film with a certain metallic luster on the surface of the handphone shell of MOTOROLA China Electronics Co., Ltd. The deposition time, evaporation current and evaporation source arrangement were discussed when the vacuum parameters were constant Influence of various factors on the insulation properties of deposited Sn dielectric films. To this end, a dedicated annular surface-source complementary evaporation circuit has been designed for the deposition of Sn dielectric insulating films on the surface of hand-held phone cases made by MOTOROLA China Electronics Co., Ltd. and its subsidiaries outside of China. In the actual production process, various factors affecting the deposition of Sn dielectric insulating films are studied in detail, and the process parameters of the deposited Sn dielectric insulating thin films are effectively controlled. To guide the large-scale production has a higher reference value.