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在PbSnTe衬底上用液相外延生长铅-锡碲层并通过很好限定的氧化物窗进行杂质扩散,已制备成可再现的高质量光伏探测器。外延层的载流子浓度约为4×10~(16)厘米~(-3),衬底的约为5×10~(18)厘米~(-3)。代替光致抗蚀剂作绝缘层用的氧化物层没有针孔并很好地附着在PbSnTe表面上。采用标准光刻和扩散技术制成了平面单片探测器阵列。在77K时,124(2×2密耳)元阵列的平均阻抗-面积乘积为1.85欧·厘米~2。在300K背景和180°视场时,在11微米不加增透膜情况下的平均量子效率和峰值探测度(D~*)分别为40％和2.6×10~(10)厘米·赫~(1/2)/瓦。
The PbSnTe substrate is epitaxially grown with a liquid-phase lead-tin tellurium layer and diffused through well-defined oxide windows to produce reproducible, high quality photovoltaic detectors. The epitaxial layer has a carrier concentration of about 4 × 10 ~ (16) cm -3 and a substrate of about 5 × 10 ~ (18) cm -3. The oxide layer for the insulating layer instead of the photoresist has no pinhole and adheres well to the PbSnTe surface. A planar monolithic detector array is fabricated using standard lithography and diffusion techniques. At 77K, the average impedance-area product of 124 (2 x 2 mil) element arrays is 1.85 ohm · cm -2. The average quantum efficiency and peak detection (D ~ *) at 11 microns with and without antireflective film were 40% and 2.6 × 10 ~ (10) cm · Hz at 300K background and 180 ° field of view respectively 1/2) / watt.