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本文描述了发射波长约为1.55μm的InGaAsP/InP激光器的制造工艺和激射特性。采用低温液相外延方法制备的InP/InGaAsP/InP双异质结构外延片,制造了发射波长在1.53～1.60μm范围的锌扩散条形几何结构激光器。研究了激射特性与条宽的依赖关系。具有1.3μm条宽的激光器得到了最低的阈值电流(在27℃,CW工作条件下,约为160mA)。热沉温度高达53℃时获得了激光器的CW工作。在条宽足够窄(～6μm)的情况下,CW工作时得到了基横模和单纵模工作,而且激光器具有很好的高频性能。在高频(800Mbit/s)大信号脉冲调制情况下,激光器呈现出极好的动态特性。800Mbit/s时的纵模包络半最大点的全宽约为30(?)。
This paper describes the manufacturing process and lasing characteristics of an InGaAsP / InP laser with an emission wavelength of about 1.55 μm. The InP / InGaAsP / InP double heterostructure epitaxial films prepared by the low temperature liquid-phase epitaxy method were used to fabricate a zinc-diffused stripe geometry laser with emission wavelength in the range of 1.53 ~ 1.60μm. The dependence of lasing properties on the width of the stripe is studied. A laser with a 1.3 μm stripe gives the lowest threshold current (about 160 mA at 27 ° C under CW operating conditions). The CW operation of the laser was obtained at a heat sink temperature of 53 ° C. When the width of the stripe is narrow enough (~ 6μm), a fundamental transverse mode and a single longitudinal mode are obtained for CW operation, and the laser has good high frequency performance. In the case of high frequency (800 Mbit / s) large signal pulse modulation, the laser exhibits excellent dynamic characteristics. The full width at half maximum of the longitudinal mode envelope at 800 Mbit / s is about 30 (?).