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利用X射线双晶多功能四圆衍射仪 ,对在Si( 0 0 1 )衬底上使用常压化学气相方法 (APCVD)生长的 3C SiC进行了微孪晶的分析 .Φ扫描证明了 3C SiC外延生长于Si衬底上 ,生长的取向关系为 :( 0 0 1 ) 3C SiC//( 0 0 1 ) Si,[1 1 1 ]3C SiC//[1 1 1 ]Si. 3C SiC的{1 1 1 }极图在χ =1 5 .8°出现了新的衍射 ,采用六角相 {1 0 1 0 }晶面的极图以及孪晶SiC( 0 0 2 )的倒易空间Mapping分析了χ=1 5 .8°处产生的衍射为 3C SiC的孪晶所致 ,并利用ω扫描估算了孪晶的含量约为 1 % .
Micro-twinning analysis of 3C SiC grown on Si (001) substrate by Atmospheric Pressure Chemical Vapor Deposition (APCVD) was carried out using an X-ray dual-crystal multifunction four-circular diffractometer.Φ-scan demonstrated that 3C SiC Epitaxial growth on the Si substrate, the growth of the orientation relationship: (0 0 1) 3C SiC // (0 0 1) Si, [1 1 1] 3C SiC // [1 1 1] Si 3C SiC { 1 1 1} polarogram appeared a new diffraction at χ = 1.58 °. The polar diagram of the hexagonal {1 0 1 0} plane and the mapping of twin SiC (0 0 2) The diffraction of χ = 1.58 ° produced by 3C SiC twins and the ω-scan estimated the twins content of about 1%.