硅双漂移雪崩二极管由于具有较高的输出功率和转换效率,是颇有发展前景的微波半导体功率器件。由于器件的性能主要取决于多层外延材料的掺杂分布,即每层浓度、厚度的精确控制及过渡区的宽度,而大功率器件又要求外延层缺陷密度尽可能的低,因 Silicon dual-drift avalanche diodes are quite promising microwave semiconductor power devices because of their high output power and conversion efficiency. Due to the performance of the device depends mainly on the doping of multi-layer epitaxial material distribution, that is, each layer of the thickness and thickness of the precise control of the width of the transition zone, and high-power devices require the epitaxial layer defect density as low as possible because