【摘 要】
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Nc-Si∶H films with thickness of about 1.0μm were deposited on glass substrates by hot-wire chemical vapor deposition.And then,the samples were irradiated at r
【出 处】
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IMP & HIRFL Annual Report
论文部分内容阅读
Nc-Si∶H films with thickness of about 1.0μm were deposited on glass substrates by hot-wire chemical vapor deposition.And then,the samples were irradiated at room temperature with 30and 196MeV Krions,which delivered by HIRFL,to fluences of 5.0×1013,1.0×1014 and 2.0×1014 Kr-ions/cm2.The irradiation parameters are listed in Table 1.
Nc-Si: H films with thickness of about 1.0 μm were deposited on glass substrates by hot-wire chemical vapor deposition. And then then the samples were irradiated at room temperature with 30 and 196 MeV Krions, which delivered by HIRFL, to fluences of 5.0 × 1013, 1.0 × 1014 and 2.0 × 1014 Kr-ions / cm2. The irradiation parameters are listed in Table 1.
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