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理想因子能够反映电流、载流子泄漏以及缺陷导致的非辐射复合等现象.针对目前报道的Ga N基发光二极管的理想因子的问题,通过对高压发光二极管I-V曲线的拟合计算出了理想因子n的数值,分别讨论了12V,19 V,51 V和80 V Ga N基高压发光二极管的理想因子与其结构中串联晶粒个数的关系,分析了理想因子大小与光谱半高宽(FWHM)的变化关系.另外,还对电流拥挤效应对理想因子的影响进行了分析.结果表明:高压发光二极管理想因子n随串联晶粒个数的增加几乎为线性规律增加,高压发光二极管理想因子n是由其串联单元理想因子之和构成的.这对Ga N基高压发光二极管理想因子的研究具有参考价值.
Ideal factor can reflect current, carrier leakage and defects caused by non-radiative recombination, etc.According to the reported ideal factor of Ga N-based light-emitting diode, through fitting high-voltage light-emitting diode IV curve to calculate the ideal factor The relationship between the ideal factor and the FWHM of the structure of the high voltage LED with 12V, 19 V, 51 V and 80 V Ga N is discussed. The influence factor of current crowding on the ideal factor is also analyzed.The results show that the ideal factor n of high-voltage light-emitting diode increases almost linearly with the increase of the number of series-connected crystal, the ideal factor n of high-voltage light-emitting diode is Which is composed of the sum of the ideal elements of the series unit, which has reference value for the research on the ideal factor of Ga N-based high-voltage light-emitting diode.