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一、引言 近年来硅P-N/绝缘层/金属(P-N-I-M)四层结构的负阻开关器件已得到广泛研究。这种器件最主要的特征是:高速开关(开关速度达1ns),高度光灵敏性,适于集成化,制造工艺简单。因而目前已做成光高速开关器件、ROM、RAM及单块移位寄存器等。本文介绍了我们研制的两端和三端开关器件及可能的应用。 二、器件结构及其工作原理 该器件的基本结构如图1所示,其中绝缘层很薄(d_0<30A)。我们可以把它看作是一个PNP晶体管和MIS二极管组成的复合结构。PNP晶体管发射区是P~+,基区是N型外延层(基极开路),收集极是半导体N型层和绝缘层界面。它的工作原理类似PNPN二极管。其
I. INTRODUCTION In recent years, the negative resistance switching device of the four-layer structure of silicon P-N / insulating layer / metal (P-N-I-M) has been widely studied. The most important feature of this device is: high-speed switching (switching speed of 1ns), high sensitivity, suitable for integration, manufacturing process is simple. So far has been made of high-speed switching devices, ROM, RAM and a single shift register. This article describes the two-terminal and three-terminal switching devices we have developed and possible applications. Second, the device structure and its working principle The basic structure of the device shown in Figure 1, in which the insulating layer is very thin (d_0 <30A). We can think of it as a composite structure consisting of a PNP transistor and a MIS diode. PNP transistor emitter region is P ~ +, the base region is N-type epitaxial layer (base open), the collector is the semiconductor N-type layer and the insulation layer interface. It works like a PNPN diode. its