Relation between doping and texture and property of tantalum bar and wire was carefully investigated by optical microscope, SEM fractograph, electron microprobe analysis, density test, observation of TEM and mechanical property test at room temperature. It is illustrated that the grain of tantalum bar after sintering reduces with the increasing of dopant quantity, and the effect of dopant Ce on reduction of the grain is more obvious than that of dopant Ge, even that sintering is becoming insufficient and the density of tantalum bar tends to be lower with the increaseing of dopant Ce. The recrystallization temperature of tantalum wire increases and the grain of texture reduces with the increaseing of dopants quantity. The tensile strength of tantalum wire at room temperature increases with the increasing of dopants quantity, while its elongation decreases with the increase of dopant Ge quantity and rises with theincrease of dopant Ce quantity. And the strengthening effect of dopant Ce is clearer than that of dopant Ge. Relation between doping and texture and property of tantalum bar and wire was carefully investigated by optical microscope, SEM fractograph, electron microprobe analysis, density test, observation of TEM and mechanical property test at room temperature. It is illustrated that the grain of tantalum bar after sintering reduces with the increasing of dopant quantity, and the effect of dopant Ce on reduction of the grain is more obvious than that of dopant Ge, even that sintering is becoming insufficient and the density of tantalum bar tends to be lower with the increaseing of dopant Ce. The recrystallization temperature of tantalum wire increases and the grain of texture reduces with the increaseing of dopants quantity. The tensile strength of tantalum wire at room temperature increases with the increasing of dopants quantity, while its loss decreases with the increase of dopant Ge quantity and rises with the increase of dopant Ce quantity. And the strengthening effect of dopant Ce i s clearer than that of dopant Ge.