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采用反应溅射的方法在具有立方织构的Ni基底上制备了CeO2缓冲层。以Ar/H2混合气体为预沉积气体,有效地抑制了基底的氧化。在基片温度为650℃,气压为26Pa的条件下沉积的CeO2薄膜具有纯c轴取向。X射线θ-2θ扫描、极图分析、Φ扫描结果表明,CeO2薄膜有良好的立方织构,其Φ扫描半高宽(FWHM)为9.0°。扫描电镜观察表明,薄膜致密且没有裂纹。
The CeO2 buffer layer was prepared on the Ni substrate with cubic texture by reactive sputtering. Ar / H2 mixed gas as a pre-deposition gas, effectively inhibiting the oxidation of the substrate. CeO2 thin films deposited at a substrate temperature of 650 ° C and an atmospheric pressure of 26 Pa have a pure c-axis orientation. X-ray θ-2θ scan, pole figure analysis and Φ-scan results show that the CeO2 film has a good cubic texture with a Φ-FWHM of 9.0 °. Scanning electron microscopy showed that the film was dense and free of cracks.