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根据电子输运的“双群理论”计算出电子在Ｓｉ－ＳｉＯ２材料中的能量沉积．用与硅等效的外推电离室测定了１．０ＭｅＶ和１．５ＭｅＶ的电子束在ＭＯＳ电容芯片中的吸收剂量．用Ｘ光电子谱（ＸＰＳ）、俄歇谱（ＡＥＳ）、深能级瞬态谱（ＤＬＴＳ）和Ｃ—Ｖ方法测量分析了ＭＯＳ电容Ｓｉ－ＳｉＯ２材料化学结构、界面态密度和Ｃ—Ｖ曲线在辐照前后的变化．根据理论和实验结果，从辐射剂量学的角度分析讨论了电子能量沉积、电离缺陷和辐射效应间的关系．并提出一个关于ＭＯＳ结构电离辐射损伤机理的初步解释。
The electron deposition in the Si-SiO2 material was calculated based on the “double-group theory” of electron transport. The absorbed doses of 1.0 MeV and 1.5 MeV electron beams in MOS capacitor chips were measured with an extrapolated ionization chamber equivalent to silicon. The chemical structure, interface state density and C-V curve of MOS capacitor Si-SiO2 were measured and analyzed by X-ray photoelectron spectroscopy (XPS), Auger spectroscopy (AES), deep level transient spectroscopy (DLTS) and C-V method Changes before and after irradiation. According to the theoretical and experimental results, the relationship between electron energy deposition, ionization defects and radiation effects is discussed from the perspective of radiation dosimetry. And put forward a preliminary explanation about the damage mechanism of ionizing radiation of MOS structure.