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本文我们首次建立了δ掺杂AlGaAs／GaAs高电子迁移串晶体管（HEMT）的二维量子模型，这种模型考虑了HEMT器件沟道中二维电子气的量子特性，根据这个模型，我们应用二维数值模拟方法和自治求解薛定谔方程和泊松方程获得了器件沟道中的二维电子浓度，同时也得到了器件沟道中的横向电场分布和横向电流密度．模拟结果表明二维电子气主要分布在异质结GaAs一侧量子附中．详细讨论了不同栅压和不同漏压下HEMT沟道中的二维电子浓度的分布及变化．
In this paper, we first establish a two-dimensional quantum model of δ-doped AlGaAs / GaAs HEMTs. This model takes into account the quantum properties of two-dimensional electron gas in the channel of a HEMT device. According to this model, The two-dimensional electron concentration in the device channel was obtained by using the numerical simulation method and autonomic solution to the Schrödinger equation and the Poisson equation. The lateral electric field distribution and lateral current density in the device channel were also obtained. The simulation results show that the two-dimensional electron gas is mainly distributed in the quantum side of the heterojunction GaAs. The distribution and changes of two-dimensional electron concentration in HEMT channel under different gate voltages and different drain pressures are discussed in detail.