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本文主要利用反气相色谱法求苯撑硅均聚体的熔点、结晶度和熔化曲线,并考察~(60)Co 辐照对苯撑硅均聚体结晶度的影响以及探讨柱涂渍浓度和“探针分子”沸点之间的关系。实验表明凡利用沸点近于或低于聚合物熔点的饱和烷烃作探针分子时,担体涂渍浓度以8%较为合适,凡利用沸点高于聚合物熔点的饱和烷烃作探针分子时,担体涂渍浓度以4%较为合适。本法无论以热导或氢焰作检测器,所得结果一致,测定误差小于±10%。本法测得苯撑硅均聚体结晶度为60~40%辐照剂量5×10~5MGy 以下对苯撑硅均聚体的结晶度和熔化曲线无显著影响,对转折温度 T_1略有降低,由此可见苯撑硅均聚体是一种较耐辐照的高分子聚合物。
In this paper, the melting point, crystallinity and melting curve of phenylene-silicon homopolymer were mainly studied by gas chromatography. The influence of ~ (60) Co irradiation on the crystallinity of phenylene-silicon homopolymer was investigated. The relationship between the boiling points of “probe molecules”. Experiments show that the use of saturated or near the boiling point of the polymer melting point of the alkane as a probe molecule, the carrier coating concentration of 8% is more appropriate, the use of boiling point higher than the melting point of the polymer saturated alkanes as probe molecules, the carrier Coating concentration of 4% is more appropriate. The law whether the thermal conductivity or hydrogen flame detector, the results obtained are consistent, the determination of error less than ± 10%. This method measured the degree of crystallinity of the phenylene-silicon homopolymer 60 ~ 40% irradiation dose of 5 × 10 ~ 5MGy below the crystallinity and melting curve of phenylene-silicon homopolymer no significant effect on the transition temperature T_1 slightly lower , We can see that phenylene silicone homopolymer is a more radiation-resistant polymer.