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在高温和大栅电流下 ,对 Ti Al栅和 Ti Pt Au栅 MESFET的稳定性进行了比较研究 ,结果表明 :( 1)两种器件的击穿电压稳定 ,栅 Schottky接触二极管理想因子 n变化不明显 ;( 2 ) Ti Al栅的 MESFET的栅特性参数 (栅电阻 Rg,势垒高度 Φb)变化明显 ,与沟道特性相关的器件参数 (如最大饱和漏电流 Idss,栅下沟道开路电阻 R0 ,夹断电压 Vp0 等 )保持相对不变 ;( 3)对 Ti Pt Au栅MESFET来说 ,栅 Schottky二极管特性 (栅电阻 Rg,势垒高度 Φb)保持相对稳定 ,与沟道特性相关的器件参数 (如最大饱和漏电流 Idss,栅下沟道开路电阻 R0 ,夹断电压 Vp0 、跨导 gm 等 )明显变化 ,适当退火后 ,有稳定的趋势。这两种器件的参数变化形成了鲜明的对比。
The stability of Ti-Al gate and Ti-Pt-Au gate MESFET is studied at high temperature and high gate current. The results show that (1) the breakdown voltage of the two devices is stable and the ideal factor n of gate Schottky contact diode does not change (2) The gate characteristics (gate resistance Rg and barrier height Φb) of the MESFET with Ti Al gate vary greatly. The device parameters related to the channel characteristics (such as the maximum saturation drain current Idss, the gate open-circuit resistance R0 , Pinch-off voltage Vp0, etc.) remain relatively unchanged; (3) Gate-Schottky diode characteristics (gate resistance Rg, barrier height Φb) remain relatively stable for Ti Pt Au gate MESFETs, and device parameters (Such as the maximum saturation current Idss, the open-circuit resistance R0 under the gate, the pinch-off voltage Vp0, the transconductance gm, etc.) obviously change. After appropriate annealing, there is a steady trend. The parameters of these two devices change in sharp contrast.