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Al栅可明显降低AM－LCD中a－SiTFT矩阵的栅总线电阻及栅脉冲信号延迟，有利于提高高密显示屏的开口率与图像质量。本文详细介绍了Al栅的阳极氧化技术，获得了适于a－SiTFT复合栅的Al2O3栅绝缘材料。
Al gate can significantly reduce the gate bus resistance and gate pulse signal delay of a-SiTFT matrix in AM-LCD, which is beneficial to improve the aperture ratio and image quality of high-density display. In this paper, the Al-gate anodization technology is introduced in detail, and the Al2O3 gate insulating material suitable for the a-SiTFT composite gate is obtained.