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采用等化学计量比的LiNbO3多晶陶瓷为靶材,利用脉冲激光沉积技术在以非晶SiO2为缓冲层的金刚石/Si衬底上制备c轴取向LiNbO3薄膜。研究了靶材与衬底之间的距离对LiNbO3薄膜的结晶质量和c轴取向性的影响,发现在靶材与衬底之间的距离为4.0cm时获得了具有优异结晶质量的完全c轴取向LiNbO3压电薄膜。采用扫描电子显微镜和原子力显微镜对最佳条件下制备的薄膜进行了分析,结果表明制得的薄膜呈与衬底垂直的柱状结构,且薄膜表面光滑,晶粒均匀致密,表面平均粗糙度约为9.5 nm。
A stoichiometric LiNbO3 polycrystalline ceramic was used as a target to prepare a c-axis oriented LiNbO3 thin film on a diamond / Si substrate with amorphous SiO2 as a buffer layer by pulsed laser deposition. The effect of the distance between the target and the substrate on the crystal quality and the c-axis orientation of the LiNbO3 thin film was investigated. It was found that when the distance between the target and the substrate is 4.0 cm, a perfect c-axis with excellent crystal quality Orientation LiNbO3 Piezoelectric Film. The scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to analyze the films prepared under the optimal conditions. The results showed that the films were perpendicular to the substrate and the surface of the film was smooth and the grains were uniform. The average surface roughness was about 9.5 nm.