用真空蒸发技术和自然氧化法在玻璃衬底上制备纳米级的硅/氧化硅薄膜和多层膜。本文采用三点法测定了常温、低温下的U-I特性,发现常温、低温下纳米量级的硅/氧化硅多层膜具有类似负阻的特性。SEM检测表明,硅/氧化硅多层膜的厚度和称重法所估算的厚度相符,薄膜表面均匀。TEM和XRD观察表明薄膜主要以无序状态存在,局部有晶化现象。 Nanostructured silicon / silicon oxide films and multilayer films were prepared on glass substrates by vacuum evaporation and natural oxidation. In this paper, the three-point method was used to determine the U-I characteristics at room temperature and low temperature. It was found that the nano-scale silicon / silicon oxide multilayer films have similar negative resistance characteristics at room temperature and low temperature. SEM examination showed that the thickness of the silicon / silicon oxide multilayer film was in accordance with the thickness estimated by the weighing method, and the surface of the film was uniform. TEM and XRD observations show that the film exists mainly in disordered state, partially crystallized.