Flexible electrically pumped random laser (RL) based on ZnO nanowires is demonstrated for the first time to our knowledge.The ZnO nanowires each with a length of 5 μm and an average diameter of 180 nm are synthesized on flexible substrate (ITO/PET) by a simple hydrothermal method.No obvious visible defect-related-emission band is observed in the photoluminescence (PL) spectrum,indicating that the ZnO nanowires grown on the flexible ITO/PET substrate have few defects.In order to achieve electrically pumped random lasing with a lower threshold,the metal-insulator-semiconductor (MIS) structure of Au/SiO2/ZnO on ITO/PET substrate is fabricated by low temperature process.With sufficient forward bias,the as-fabricated flexible device exhibits random lasing,and a low threshold current of ～ 11.5 mA and high luminous intensity are obtained from the ZnO-based random laser.It is believed that this work offers a case study for developing the flexible electrically pumped random lasing from ZnO nanowires.