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对形成室温单电子现象的典型串联双隧道结结构模型利用温克布 (WKB)三氏法求解薛定谔方程 ,计算了其隧穿电流与偏压的关系。利用该方法对 Cd S纳米粒子自组装体系在室温下的 I- V特性进行了计算机模拟 ,发现结果与实验符合得很好。该方法对于进一步指导纳米电子器件的实验及其原型化有重要意义。
A typical tandem twin tunnel junction structure model for the formation of single electron at room temperature was solved by the WKB method and the Schrodinger equation was calculated. The relationship between tunneling current and bias voltage was calculated. The method was used to simulate the I-V properties of self-assembled CdS nanoparticles at room temperature. The results show good agreement with the experimental results. This method is of great significance for further experiments and prototyping of nanoelectronic devices.