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计算机数控精密机械抛光技术是制造高精度、高质量光学元件表面的主要技术之一。然而,对于碳化硅材料表面去除特性方面的研究却相对较少。在航天航空领域中,陶瓷类材料碳化硅的应用较为广泛。针对计算机数控精密机械抛光技术,根据一系列的抛光实验,研究并总结出碳化硅材料表面的去除机理。基于选择不同等级的四种变量参数:抛光磨头转速、抛光压力、磨头补偿量和抛光头角度,分析碳化硅材料表面的去除趋势。采用Taguchi方法可以有效优化实验设计参数、减少实验整体次数。结果表明:文中总结出对应的抛光参数组合和材料表面的去除特性,确保加工出高质量表面的碳化硅材料。
Computer numerical control precision mechanical polishing technology is to create high-precision, high-quality optical components surface of one of the major technologies. However, there are relatively few studies on the surface removal behavior of silicon carbide. In the field of aerospace, ceramic materials, silicon carbide is more widely used. Aiming at the computer numerical control precision mechanical polishing technology, according to a series of polishing experiments, the removal mechanism of the surface of silicon carbide is studied and summarized. Based on the four variable parameters of different grades, polishing speed, polishing pressure, grinding head compensation and polishing head angle, the removal trend of silicon carbide was analyzed. The Taguchi method can effectively optimize the experimental design parameters, reducing the overall number of experiments. The results show that the corresponding polishing parameter combination and material surface removal characteristics are summarized in this paper to ensure the fabrication of high quality silicon carbide.