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兰大技革组已从实验上发现,只要时3AG63锗合金扩散晶体管进行适当地脉冲“处理后”,它的Ⅰ-Ⅴ特性就具有典型的负阻特性。文中探讨了这种负阻现象的物理机理,借用电子计算机求解了热—电传导方程式,所得结果同实验一致。
It has been found experimentally that the Ⅰ-Ⅴ characteristic of the 3AG63 germanium alloy diffusion transistor has a typical negative resistance characteristic when properly pulsed “treated”. In this paper, the physical mechanism of this negative resistance is discussed. The thermal-electric conduction equation is solved by computer. The result is consistent with the experiment.