半导体激光器随着输出功率的提高在各领域的应用日益广泛,但芯片温度升高引起的功率饱和问题仍然是目前研究的重点之一。利用ANSYS软件对工作波长为808nm的单芯片半导体激光器的芯片有源区温度与封装热沉尺寸的关系进行了稳态热分析,模拟得出不同热沉参数条件下封装激光器芯片有源区温度的变化曲线,并提出一种散热较好的结构方案。 Semiconductor lasers have been widely used in various fields with the increase of output power. However, the issue of power saturation due to chip temperature increase is still one of the focuses of current research. The steady-state thermal analysis of the relationship between the chip active area temperature and package heat sink size of a single-chip semiconductor laser with a working wavelength of 808nm was carried out by using ANSYS software. The simulation results show that the temperature of the active region of the laser chip encapsulated under different heat sink parameters Change curve, and put forward a better heat dissipation structure scheme.