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采用坩埚下降法生长了尺寸为f25 mm×100 mm的Ho~(3+)掺杂的Bi_4Si_3O_(12)(BSO:Ho)晶体,研究了所得晶体的透射光谱、激发光谱、发射光谱等特性。结果表明:BSO:Ho晶体透射光谱与纯BSO晶体基本一致,在350~800 nm波长范围的透过率约为80%,吸收边在286 nm处;在360、454和537 nm处存在与Ho~(3+)有关的吸收峰;激发光谱在240~310 nm波段出现1个宽的激发带,峰值在290 nm左右;发射光谱中除480 nm发射带外,在573 nm附近有多个与Ho~(3+)有关的尖锐发射峰。BSO:Ho晶体的主要发光分量的荧光衰减时间为94.41 ns,表明掺杂0.1%Ho~(3+)(摩尔分数)有利于提高BSO晶体的闪烁性能。
The Ho_ (3 +) doped Bi_4Si_3O_ (12) (BSO: Ho) crystal with the size of f25 mm × 100 mm was grown by the crucible down method. The properties of the obtained crystal, such as transmission spectrum, excitation spectrum and emission spectrum, were studied. The results show that the transmission spectrum of BSO: Ho crystal is basically the same as that of pure BSO crystal. The transmittance of BSO: Ho crystal is about 80% in the wavelength range of 350-800 nm and the absorption edge is at 286 nm. At 360, 454 and 537 nm, ~ (3+). The excitation spectrum shows a broad excitation band in the band of 240-310 nm with a peak at about 290 nm. In addition to the 480 nm emission band in the emission spectrum, there are several bands near 573 nm Ho ~ (3 +) about the sharp emission peak. The fluorescence decay time of the main luminescence component of BSO: Ho crystal is 94.41 ns, which indicates that the doping 0.1% Ho 3+ (mole fraction) is beneficial to improve the scintillation performance of BSO crystal.